Paper Titles

Hydrogen Diffusion in Compound Semiconductors
p.219

Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors
p.251

Hydrogen in Crystalline Gallium Phosphide
p.281

Hydrogen in Ternary and Quaternary Materials
p.295

Shallow Levels Passivation in Implanted and Plasma Hydrogenated Compound Semiconductors
p.321

Theoretical and μSR Studies Related to Hydrogen in Compound Semiconductors
p.349

Hydrogen in III-V Compound Semiconductors
p.393

Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques
p.481

Hydrogen in III-V Device Structures
p.501

HomeMaterials Science ForumMaterials Science Forum Vols. 148-149Spectroscopy of Hydrogen-Related Defects in III-V...

Spectroscopy of Hydrogen-Related Defects in III-V Semiconductors by Nuclear Techniques

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Hydrogen in Compound Semiconductors

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Periodical:

Materials Science Forum (Volumes 148-149)

Pages:

481-500

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.148-149.481

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Online since:

December 1993

Authors:

Manfred Deicher, Wulf Pfeiffer

Keywords:

Cadmium-Hydrogen Stability, Cd, Deuterium-Hydrogen Pairs, GaAs, Hyperfine Interaction, III-V Compounds, InP, Mössbauer Effect, Passivation, Perturbed Angular Correlation (PAC), Radioactive Isotopes

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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