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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Ion Implantation Induced Damage Accumulation...

Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry

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Materials Science Applications of Ion Beam Techniques

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Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

229-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.229

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Online since:

May 1997

Authors:

T. Lohner, N.Q. Khánh, P. Petrik, M. Fried, E. Kótai, J. Gyulai

Keywords:

Damage Characterization, Ion Implantation, Rutherford Backscattering Spectrometry, Spectroscopic Ellipsometry (SE)

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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