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HomeMaterials Science ForumMaterials Science Forum Vols. 248-249Lattice Damage of Relaxed Si1-xGex Alloys of...

Lattice Damage of Relaxed Si_1-xGe_x Alloys of Various Composition Implanted with 2 MeV Si Ions

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Materials Science Applications of Ion Beam Techniques

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Periodical:

Materials Science Forum (Volumes 248-249)

Pages:

241-244

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.248-249.241

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Online since:

May 1997

Authors:

J.K.N. Lindner

Keywords:

Ion Implantation, MeV, Radiation Damage, Semiconductor, SiGe Alloys

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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