Ion Implantation Induced Damage Accumulation Studied by Rutherford Backscattering Spectrometry and Spectroscopic Ellipsometry
p.229
p.229
Plasma Immersion Ion Implantation of Nitrogen into Porous Silicon Layers
p.233
p.233
Formation of Buried SiC Layers in Silicon by Ion Beam Synthesis
p.237
p.237
Lattice Damage of Relaxed Si1-xGex Alloys of Various Composition Implanted with 2 MeV Si Ions
p.241
p.241
Auger Depth Profiling with Good Depth Resolution of Low Energy Implantation Induced Ion Mixing
p.245
p.245
Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures
p.249
p.249
Pulsed Electron Beam Annealing of GaAs after High Dose Implantation of Hydrogen
p.253
p.253
Dose Rate and Temperature Dependence of the Crystallization Rate during IBIEC in InAs
p.257
p.257
Damage Production in Ion Implanted III-V Compounds: A Comparative Study
p.261
p.261
Auger Depth Profiling with Good Depth Resolution of Low Energy Implantation Induced Ion Mixing
Abstract:
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Periodical:
Materials Science Forum (Volumes 248-249)
Pages:
245-248
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Online since:
May 1997
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© 1997 Trans Tech Publications Ltd. All Rights Reserved
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