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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Bistability of Oxygen Vacancy in Silicon Dioxide

Bistability of Oxygen Vacancy in Silicon Dioxide

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1479-1484

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1479

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Online since:

December 1997

Authors:

Atsushi Oshiyama

Keywords:

Bistability, LDA, Negative-U, Oxygen Vacancy, SiO₂

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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