Bistability of Oxygen Vacancy in Silicon Dioxide

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Periodical:

Materials Science Forum (Volumes 258-263)

Edited by:

Gordon Davies and Maria Helena Nazaré

Pages:

1479-1484

DOI:

10.4028/www.scientific.net/MSF.258-263.1479

Citation:

A. Oshiyama "Bistability of Oxygen Vacancy in Silicon Dioxide", Materials Science Forum, Vols. 258-263, pp. 1479-1484, 1997

Online since:

December 1997

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$35.00

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