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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Direct Evidence for Stability of Tetrahedral...

Direct Evidence for Stability of Tetrahedral Interstitial Er in Si up to 900°C

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1503-1508

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1503

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Online since:

December 1997

Authors:

Ulrich Wahl, J.G. Correia, G. Langouche, J.G. Marques, A. Vantomme, the ISOLDE Collaboration the ISOLDE Collaboration

Keywords:

ER, Ion Implantation, Lattice Location, Rare Earth Doping, Silicon

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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