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HomeMaterials Science ForumMaterials Science Forum Vols. 258-263Energy Transfer Rate Between Erbium 4ƒ Shell and...

Energy Transfer Rate Between Erbium 4ƒ Shell and Si Host

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Defects in Semiconductors 19

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Periodical:

Materials Science Forum (Volumes 258-263)

Pages:

1491-1496

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.258-263.1491

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Online since:

December 1997

Authors:

Akihito Taguchi, Kenichiro Takahei, Masaya Matsuoka, S. Tohno

Keywords:

Energy Transfer Rate, ER, luminescence Decay Time, Silicon, Time Response

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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