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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Optical Characterization of 4H-SiC p+n-n+...

Optical Characterization of 4H-SiC p⁺n^-n⁺ Structures Applying Time- and Spectrally Resolved Emission Microscopy

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

683-686

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.683

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Online since:

May 2000

Authors:

Augustinas Galeckas, Jan Linnros, Bo Breitholtz

Keywords:

Carrier Diffusion Length, Defect, Electroluminescence, Optical Emission Microscopy, Recombination Lifetime

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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