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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Free Carrier Diffusion Measurements in Epitaxial...

Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

671-674

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.671

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Online since:

May 2000

Authors:

Paulius Grivickas, Jan Linnros, Vytautas Grivickas

Keywords:

Ambipolar Diffusivity, Epitaxial Layer, Free Carrier Absorption, Transient Grating

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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