Paper Titles

Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC
p.659

Confocal Raman Microprobe of Lattice Damage in N⁺ Implanted 6H-SiC
p.663

Ion Beam Induced Change in the Linear Optical Properties of SiC
p.667

Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence
p.671

Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC
p.675

Optical Lifetime Measurements in 4H SiC
p.679

Optical Characterization of 4H-SiC p⁺n^-n⁺ Structures Applying Time- and Spectrally Resolved Emission Microscopy
p.683

Electroluminescence From Implanted and Epitaxially Grown pn-Diodes
p.687

Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes
p.691

HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Time-Resolved Photoluminescence Study of Bound and...

Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials - 1999

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

675-678

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.675

Citation:

Cite this paper

Online since:

May 2000

Authors:

G.R. Pozina, Peder Bergman, Carl G. Hemmingsson, Erik Janzén

Keywords:

Bound Exciton, Carrier Lifetime, Free Excitons, Time-Resolved Photoluminescence

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: