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Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

695-698

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.695

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Online since:

May 2000

Authors:

C. Banc, Edwige Bano, Thierry Ouisse, Sigo Scharnholz, U. Schmid, W. Wondrak, E. Niemann

Keywords:

4H-SiC, 6H-SiC, Impact Ionization, Mechanism, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Photon Emission, Saturation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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