For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Optical Characterization of 4H-SiC p+n-n+ Structures Applying Time- and Spectrally Resolved Emission Microscopy
p.683
Electroluminescence From Implanted and Epitaxially Grown pn-Diodes
p.687
Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes
p.691
Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs
p.695
Non-Contact Photovoltage Measurements in SiC
p.699
Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide
p.703
MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC
p.707
Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6
p.711
Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI)
p.715

Non-Contact Photovoltage Measurements in SiC

Article Preview

Abstract:

You might also be interested in these eBooks
Silicon Carbide and Related Materials - 1999 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

699-702

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.699

Citation:

Cite this paper

Online since:

May 2000

Authors:

Yaroslav Koshka, Michael S. Mazzola

Keywords:

Capacitive Contact, Junction Impedance, Non-Contact Characterization, Photovoltage

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2000 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.