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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Ionization Energies and Electron Mobilities in...

Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

703-706

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.703

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Online since:

May 2000

Authors:

Michael A. Capano, James A. Cooper, M.R. Melloch, Adam W. Saxler, W.C. Mitchel

Keywords:

Electron Mobility, Ionization Energies, Nitrogen Implantation, Phosphorus Implantation

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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