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HomeMaterials Science ForumMaterials Science Forum Vols. 338-342Electrical Properties of 3C-SiC Grown on Si by CVD...

Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si₂(CH₃)₆

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Silicon Carbide and Related Materials - 1999

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Periodical:

Materials Science Forum (Volumes 338-342)

Pages:

711-714

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.338-342.711

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Online since:

May 2000

Authors:

Yasuichi Masuda, Yi Chen, Hideharu Matsuura, Hiroshi Harima, Shigehiro Nishino

Keywords:

3C-SiC, Carrier Concentration, Coupled Mode, Hall Mobility, Hall-Effect, LO Phonon, Plasmon, Raman Scattering, Si₂(CH₃)₆ (Hexamethyldisilane)

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© 2000 Trans Tech Publications Ltd. All Rights Reserved

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