Paper Titles

Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
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Low Temperature Photoluminescence Processes of ¹³C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method
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Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy
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Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study
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Prediction of Optical Properties of Si and Ge Dots in SiC
p.413

Investigation of Variable Incidence Angle Spectroscopic Ellipsometry for Determination of Below Band Gap Uniaxial Dielectric Function
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Theory of Hydrogen in Silicon Carbide
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Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC
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Proton Irradiation Induced Defects in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Prediction of Optical Properties of Si and Ge Dots...

Prediction of Optical Properties of Si and Ge Dots in SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

413-416

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.413

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Online since:

January 2001

Authors:

Hans-Christian Weissker, J. Furthmüller, Friedhelm Bechstedt

Keywords:

Dielectric Function, Nanocrystal, Optical Property, Quantum Dot (QD)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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