Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

409-412

DOI:

10.4028/www.scientific.net/MSF.353-356.409

Citation:

A. Fissel and W. Richter, "Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study", Materials Science Forum, Vols. 353-356, pp. 409-412, 2001

Online since:

January 2001

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$35.00

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