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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Epitaxial Growth and Properties of SiC Layers...

Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

409-412

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.409

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Online since:

January 2001

Authors:

Andreas Fissel, W. Richter

Keywords:

MBE, Optical Property, Photoluminescence (PL)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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