Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
p.385
p.385
Investigation of Electroluminescence across 4H-SiC p+/n-/n+ Structures Using Optical Emission Microscopy
p.389
p.389
Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy
p.393
p.393
Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
p.397
p.397
Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method
p.401
p.401
Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy
p.405
p.405
Epitaxial Growth and Properties of SiC Layers Grown on α-SiC(0001) by Solid-Source MBE: A Photoluminescence Study
p.409
p.409
Prediction of Optical Properties of Si and Ge Dots in SiC
p.413
p.413
Investigation of Variable Incidence Angle Spectroscopic Ellipsometry for Determination of Below Band Gap Uniaxial Dielectric Function
p.417
p.417
Low Temperature Photoluminescence Processes of 13C Enriched 6H- and 15R-SiC Crystals Grown by the Modified Lely Method
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
401-404
Citation:
Online since:
January 2001
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Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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