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Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
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Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
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Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
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Investigation of Electroluminescence across 4H-SiC p⁺/n^-/n⁺ Structures Using Optical Emission Microscopy
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Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy
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Absorption Measurements and Doping Level Evaluation in n-Type and p-Type 4H-SiC and 6H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Infrared Investigation of Implantation Damage and...

Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

385-388

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.385

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Online since:

January 2001

Authors:

Julien Pernot, Jean Marie Bluet, Jean Camassel, Lea Di Cioccio

Keywords:

4H-SiC, Aluminum (Al), Annealing, Implantation Damage, Infrared Reflectivity

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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