Paper Titles

Free Carrier Diffusion in 4H-SiC
p.353

Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy
p.357

Zeeman Effect of D₁ Bound Exciton in 4H-SiC
p.361

As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
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Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons
p.369

Presence of Hydrogen in SiC
p.373

Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
p.377

Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
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Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Characterization of SiC:P Prepared by Nuclear...

Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

369-372

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.369

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Online since:

January 2001

Authors:

Hans Heissenstein, Reinhard Helbig

Keywords:

Defect, FT-IR, Hall-Effect, Neutron, Nitrogen, Phosphorous

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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