Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

377-380

DOI:

10.4028/www.scientific.net/MSF.353-356.377

Citation:

S.G. Sridhara et al., "Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC", Materials Science Forum, Vols. 353-356, pp. 377-380, 2001

Online since:

January 2001

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$35.00

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