Paper Titles

Zeeman Effect of D₁ Bound Exciton in 4H-SiC
p.361

As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
p.365

Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons
p.369

Presence of Hydrogen in SiC
p.373

Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
p.377

Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
p.381

Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
p.385

Investigation of Electroluminescence across 4H-SiC p⁺/n^-/n⁺ Structures Using Optical Emission Microscopy
p.389

Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy
p.393

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Investigation of an Ion-Implantation Induced High...

Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

377-380

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.377

Citation:

Cite this paper

Online since:

January 2001

Authors:

S.G. Sridhara, F.H.C. Carlsson, Peder Bergman, Anne Henry, Erik Janzén

Keywords:

D_ll, Persistent Defects, Photoluminescence (PL), Time-Resolved

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: