Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

381-384

DOI:

10.4028/www.scientific.net/MSF.353-356.381

Citation:

J. W. Steeds et al., "Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy", Materials Science Forum, Vols. 353-356, pp. 381-384, 2001

Online since:

January 2001

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