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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Differentiation between C and Si Related Damage...

Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

381-384

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.381

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Online since:

January 2001

Authors:

John W. Steeds, F. Carosella, A.G. Evans, M.M. Ismail, L. R. Danks, W. Voegeli

Keywords:

Carbon Displacement Threshold, Diffusion, Displacement Anisotropy, Silicon Displacement Threshold, Two Photon Absorption

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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