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Investigation of Electroluminescence across 4H-SiC p⁺/n^-/n⁺ Structures Using Optical Emission Microscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Investigation of Electroluminescence across 4H-SiC...

Investigation of Electroluminescence across 4H-SiC p⁺/n^-/n⁺ Structures Using Optical Emission Microscopy

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

389-392

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.389

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Online since:

January 2001

Authors:

Augustinas Galeckas, Jan Linnros, Bo Breitholtz, H. Bleichner

Keywords:

4H-SiC, Carrier Recombination, Diffusion Length, Electroluminescence, Imaging Spectroscopy

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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