Paper Titles

Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy
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Zeeman Effect of D₁ Bound Exciton in 4H-SiC
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As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
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Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons
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Presence of Hydrogen in SiC
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Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
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Differentiation between C and Si Related Damage Centres in 4H- and 6H-SiC by the Use of 90-300 kV Electron Irradiation Followed by Low Temperature Photoluminescence Microscopy
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Infrared Investigation of Implantation Damage and Implantation Damage Annealing in 4H-SiC
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Investigation of Electroluminescence across 4H-SiC p⁺/n^-/n⁺ Structures Using Optical Emission Microscopy
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Presence of Hydrogen in SiC

Presence of Hydrogen in SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

373-376

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.373

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Online since:

January 2001

Authors:

Anne Henry, Björn Magnusson, Margareta K. Linnarsson, Alexsandre Ellison, Mikael Syväjärvi, Rositza Yakimova, Erik Janzén

Keywords:

Boron, Hydrogen, Photoluminescence (PL), SIMS

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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