Paper Titles

Low-Frequency Vibrational Spectroscopy in SiC Polytypes
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Free Carrier Diffusion in 4H-SiC
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Valence Band Splittings of 15R-SiC Measured using Wavelength Modulated Absorption Spectroscopy
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Zeeman Effect of D₁ Bound Exciton in 4H-SiC
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As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
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Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons
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Presence of Hydrogen in SiC
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Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356As-Grown and Process-Induced Intrinsic Deep-Level...

As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

365-368

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.365

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Online since:

January 2001

Authors:

Björn Magnusson, Alexsandre Ellison, F.H.C. Carlsson, Nguyen Tien Son, Erik Janzén

Keywords:

Annealing, Deep Level, Ion Implantation, Irradiation, Photoluminescence (PL), Zeeman Effect

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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