Materials Science Forum Vols. 353-356

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https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

Paper Title Page

Preface and Overview

Large Diameter, Low Defect Silicon Carbide Boule Growth

Authors: Calvin H. Carter Jr., R.C. Glass, M.F. Brady, D.P. Malta, D. Henshall, Stephan G. Müller, Valeri F. Tsvetkov, H. McD. Hobgood, Adrian R. Powell

Sponsors and Committees

Preface

SiC Single Crystal Growth by Sublimation: Experimental and Numerical Results

Authors: Cécile Moulin, Michel Pons, Alexander Pisch, Philippe Grosse, Christian Faure, Alain Basset, Gérard Basset, Antoine Passero, Thierry Billon, Bernard Pelissier, Mikhail Anikin, Etienne Pernot, Petra Pernot-Rejmánková, Roland Madar

Overview

Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

Authors: Peter J. Wellmann, Dieter Hofmann, L. Kadinski, M. Selder, Thomas L. Straubinger, Albrecht Winnacker

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions

Authors: Erwin Schmitt, Michael Rasp, Arnd Dietrich Weber, M. Kölbl, Robert Eckstein, L. Kadinski, M. Selder

Progress in 4H-SiC Bulk Growth

Authors: Mikhail Anikin, Etienne Pernot, Bernard Pelissier, Michel Pons, Alexander Pisch, Claude Bernard, Thierry Billon, Christian Faure, Cécile Moulin, Roland Madar

Stability Criteria for 4H-SiC Bulk Growth

Authors: Thomas L. Straubinger, Matthias Bickermann, Dieter Hofmann, Roland Weingärtner, Peter J. Wellmann, Albrecht Winnacker