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Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

ToC:

Table of Contents

Paper Title Page

Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing
Authors: D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz, Wolfgang Skorupa
151
How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
Authors: Thierry Chassagne, Gabriel Ferro, C. Gourbeyre, M. Le Berre, Daniel Barbier, Yves Monteil
155
Growth of 3C-SiC on Si by Low Temperature CVD
Authors: T. Cloitre, N. Moreaud, Patrice Vicente, M.L. Sadowski, R.L. Aulombard
159
Growth of SiC on Si(100) by Low-Pressure MOVPE
Authors: Andrey Bakin, A.A. Ivanov, Kensaku Hisada, T. Riedl, F. Hitzel, H.-H. Wehmann, A. Schlachetzki
163
The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process
Authors: Chien-Hung Wu, Juyong Chung, Moon Hi Hong, Christian A. Zorman, P. Pirouz, Mehran Mehregany
167
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
Authors: Chien-Hung Wu, Juyong Chung, Moon Hi Hong, Christian A. Zorman, P. Pirouz, Mehran Mehregany
171
Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates
Authors: M. Eickhoff, S. Zappe, A. Nielsen, G. Krötz, E. Obermeier, N. Vouroutzis, J. Stoemenos
175
Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
Authors: Joerg Pezoldt, Bernd Schröter, Volker Cimalla, Thomas Stauden, R. Goldhahn, Henry Romanus, Lothar Spieß
179
The Influence of Ge on the SiC Nucleation on (111)Si Surfaces
Authors: Joerg Pezoldt, T. Wöhner, Thomas Stauden, J.A. Schaefer, György Vida
183
In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces
Authors: Volker Cimalla, Konstantinos Zekentes, Katerina Tsagaraki, Thomas Stauden, F. Scharmann, Joerg Pezoldt
187

Showing 41 to 50 of 198 Paper Titles

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