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Paper Titles
Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
p.135
Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System
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Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates
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SiC Polytype Transformation on the Growth Surface
p.147
Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing
p.151
How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
p.155
Growth of 3C-SiC on Si by Low Temperature CVD
p.159
Growth of SiC on Si(100) by Low-Pressure MOVPE
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The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process
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Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

151-154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.151

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Online since:

January 2001

Authors:

D. Panknin, J. Stoemenos, M. Eickhoff, V. Heera, N. Vouroutzis, G. Krötz, Wolfgang Skorupa

Keywords:

3C-SiC/Si Interface, Flash Lamp Annealing, TEM Characterization

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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