The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

167-170

DOI:

10.4028/www.scientific.net/MSF.353-356.167

Citation:

C.-H. Wu et al., "The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process", Materials Science Forum, Vols. 353-356, pp. 167-170, 2001

Online since:

January 2001

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