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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Selective Deposition of 3C-SiC Epitaxially Grown...

Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

175-178

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.175

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Online since:

January 2001

Authors:

M. Eickhoff, S. Zappe, A. Nielsen, G. Krötz, E. Obermeier, N. Vouroutzis, J. Stoemenos

Keywords:

Selective Epitaxy, TEM Characterization

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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