In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

187-190

DOI:

10.4028/www.scientific.net/MSF.353-356.187

Citation:

V. Cimalla et al., "In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces", Materials Science Forum, Vols. 353-356, pp. 187-190, 2001

Online since:

January 2001

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$35.00

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