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Paper Titles
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
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Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates
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Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
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The Influence of Ge on the SiC Nucleation on (111)Si Surfaces
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In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces
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Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron Sputtering
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Laser Crystallization of Amorphous SiC Thin Films on Glass
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TEM Investigation of Si Implanted Natural Diamond
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Surface Reconstruction on SiC(0001) and SiC(000-1): Atomic Structure and Potential Application for Oxidation, Stacking and Growth
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In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

187-190

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.187

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Online since:

January 2001

Authors:

Volker Cimalla, Konstantinos Zekentes, Katerina Tsagaraki, Thomas Stauden, F. Scharmann, Joerg Pezoldt

Keywords:

Carbonization, Germanium, Heteroepitaxy, Molecular Beam Epitaxy, RHEED

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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