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Paper Titles
Growth of SiC on Si(100) by Low-Pressure MOVPE
p.163
The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process
p.167
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
p.171
Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates
p.175
Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
p.179
The Influence of Ge on the SiC Nucleation on (111)Si Surfaces
p.183
In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces
p.187
Structural and Optical Properties of SiC Films Deposited on Si by DC Magnetron Sputtering
p.191
Laser Crystallization of Amorphous SiC Thin Films on Glass
p.195

Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

179-182

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.179

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Online since:

January 2001

Authors:

Joerg Pezoldt, Bernd Schröter, Volker Cimalla, Thomas Stauden, R. Goldhahn, Henry Romanus, Lothar Spieß

Keywords:

Carbonization, Heteroepitaxy, Molecular Beam Epitaxy, RHEED, Surface Polarity, X-Ray Photoelectron Diffraction

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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