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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Growth of SiC on Si(100) by Low-Pressure MOVPE

Growth of SiC on Si(100) by Low-Pressure MOVPE

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

163-166

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.163

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Online since:

January 2001

Authors:

Andrey Bakin, A.A. Ivanov, Kensaku Hisada, T. Riedl, F. Hitzel, H.-H. Wehmann, A. Schlachetzki

Keywords:

Chemical Vapor Deposition (CVD), MOVPE, SiC Growth, SiC on Si

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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