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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356How to Grow Unstrained 3C-SiC Heteroepitaxial...

How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

155-158

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.155

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Online since:

January 2001

Authors:

Thierry Chassagne, Gabriel Ferro, C. Gourbeyre, M. Le Berre, Daniel Barbier, Yves Monteil

Keywords:

Chemical Vapor Deposition (CVD), Heteroepitaxy, Stress

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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