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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Growth of 3C-SiC Using Off-Oriented 6H-SiC...

Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

143-146

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.143

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Online since:

January 2001

Authors:

Mikael Syväjärvi, Rositza Yakimova, Henrik Jacobsson, Erik Janzén

Keywords:

3C-SiC, Bulk, Sublimation Growth

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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