SiC Defect Density Reduction by Epitaxy on Porous Surfaces
p.115
p.115
Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations
p.119
p.119
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
p.123
p.123
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
p.127
p.127
Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
p.131
p.131
Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
p.135
p.135
Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System
p.139
p.139
Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates
p.143
p.143
SiC Polytype Transformation on the Growth Surface
p.147
p.147
Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
131-134
Citation:
Online since:
January 2001
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© 2001 Trans Tech Publications Ltd. All Rights Reserved
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