Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

131-134

DOI:

10.4028/www.scientific.net/MSF.353-356.131

Citation:

H. Tsuchida et al., "Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate", Materials Science Forum, Vols. 353-356, pp. 131-134, 2001

Online since:

January 2001

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$35.00

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