Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
p.107
p.107
Ab Initio Study of Silicon Carbide: Bulk and Surface Structures
p.111
p.111
SiC Defect Density Reduction by Epitaxy on Porous Surfaces
p.115
p.115
Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations
p.119
p.119
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
p.123
p.123
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
p.127
p.127
Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
p.131
p.131
Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
p.135
p.135
Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System
p.139
p.139
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
123-126
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Online since:
January 2001
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© 2001 Trans Tech Publications Ltd. All Rights Reserved
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