Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

123-126

Citation:

S. Nishino et al., "Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD", Materials Science Forum, Vols. 353-356, pp. 123-126, 2001

Online since:

January 2001

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