Modeling Analysis of SiC CVD in a Planetary Reactor
p.103
p.103
Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
p.107
p.107
Ab Initio Study of Silicon Carbide: Bulk and Surface Structures
p.111
p.111
SiC Defect Density Reduction by Epitaxy on Porous Surfaces
p.115
p.115
Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations
p.119
p.119
Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD
p.123
p.123
Low Temperature Selective and Lateral Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates
p.127
p.127
Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate
p.131
p.131
Control of Surface Morphologies for Epitaxial Growth on Low Off-Angle 4H-SiC (0001) Substrates
p.135
p.135
Effect of Sublimation Growth on the Structure of Porous Silicon Carbide: SEM and X-Ray Diffraction Investigations
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
119-122
Citation:
Online since:
January 2001
Authors:
Keywords:
Price:
Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: