Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

139-142

Citation:

Y. Masuda et al., "Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System", Materials Science Forum, Vols. 353-356, pp. 139-142, 2001

Online since:

January 2001

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