Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

139-142

DOI:

10.4028/www.scientific.net/MSF.353-356.139

Citation:

Y. Masuda et al., "Surface Morphology of 4H-SiC Inclined towards <1-100> and <11-20> Grown by APCVD Using the Si2Cl6+C3H8 System", Materials Science Forum, Vols. 353-356, pp. 139-142, 2001

Online since:

January 2001

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