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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Surface Morphology of 4H-SiC Inclined towards...

Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si₂Cl₆+C₃H₈ System

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

139-142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.139

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Online since:

January 2001

Authors:

Yasuichi Masuda, Satoru Ohshima, Chacko Jacob, Shigehiro Nishino

Keywords:

Atomic Force Microscope (AFM), C₃H₈ Etching, HCl Etching, Homoepitaxial Growth, Off-Orientation, Step Height, Surface Morphology, Surface Roughness (SR)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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