A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

171-174

DOI:

10.4028/www.scientific.net/MSF.353-356.171

Citation:

C.-H. Wu et al., "A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si", Materials Science Forum, Vols. 353-356, pp. 171-174, 2001

Online since:

January 2001

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