How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
p.155
p.155
Growth of 3C-SiC on Si by Low Temperature CVD
p.159
p.159
Growth of SiC on Si(100) by Low-Pressure MOVPE
p.163
p.163
The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process
p.167
p.167
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
p.171
p.171
Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates
p.175
p.175
Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
p.179
p.179
The Influence of Ge on the SiC Nucleation on (111)Si Surfaces
p.183
p.183
In Situ RHEED Studies on the Influence of Ge on the Early Stages of SiC on Si(111) and (100) Surfaces
p.187
p.187
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
171-174
Citation:
Online since:
January 2001
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Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
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