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Vols. 353-356

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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356

Materials Science Forum Vols. 353-356

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356

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Table of Contents

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Paper Title Page

Crystal Growth of 15R-SiC and Various Polytype Substrates

Authors: Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino

69

Micropipe Filling by the Sublimation Close Space Technique

Authors: Tomoaki Furusho, Satoru Ohshima, Shigehiro Nishino

73

Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method

Authors: T. Shimizu, Taro Nishiguchi, Makato Sasaki, Satoru Ohshima, Shigehiro Nishino

77

Chemical Vapor Deposition of SiC by the Temperature Oscillation Method

Authors: Yu.V. Martynov

81

Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals

Authors: Didier Chaussende, Christophe Jacquier, Gabriel Ferro, Jean Claude Viala, François Cauwet, Yves Monteil

85

Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations

Authors: Jie Zhang, Alexsandre Ellison, Örjan Danielsson, Anne Henry, Erik Janzén

91

Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor

Authors: Günter Wagner, K. Irmscher

95

Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation

Authors: Örjan Danielsson, Urban Forsberg, Anne Henry, Erik Janzén

99

Modeling Analysis of SiC CVD in a Planetary Reactor

Authors: A.N. Vorob'ev, A.K. Semennikov, A.I. Zhmakin, Yuri Makarov, M. Dauelsberg, Frank Wischmeyer, M. Heuken, H. Jürgensen

103

Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor

Authors: A.N. Vorob'ev, M.V. Bogdanov, A.E. Komissarov, S.Yu. Karpov, O.V. Bord, A.A. Lovtsus, Yuri Makarov

107

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