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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Influence of the Growth Conditions on the Layer...

Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

95-98

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.95

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Online since:

January 2001

Authors:

Günter Wagner, K. Irmscher

Keywords:

Chemical Vapor Deposition (CVD), C-V Measurement, Hot-Wall CVD, Silicon Carbide (SiC), SIMS, Thickness Mapping

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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