Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

95-98

DOI:

10.4028/www.scientific.net/MSF.353-356.95

Citation:

G. Wagner and K. Irmscher, "Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor", Materials Science Forum, Vols. 353-356, pp. 95-98, 2001

Online since:

January 2001

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