Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

99-102

DOI:

10.4028/www.scientific.net/MSF.353-356.99

Citation:

Ö. Danielsson et al., "Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation", Materials Science Forum, Vols. 353-356, pp. 99-102, 2001

Online since:

January 2001

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$35.00

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