Paper Titles

Chemical Vapor Deposition of SiC by the Temperature Oscillation Method
p.81

Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
p.85

Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
p.91

Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
p.95

Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
p.99

Modeling Analysis of SiC CVD in a Planetary Reactor
p.103

Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
p.107

Ab Initio Study of Silicon Carbide: Bulk and Surface Structures
p.111

SiC Defect Density Reduction by Epitaxy on Porous Surfaces
p.115

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Enlarging the Usable Growth Area in a Hot-Wall...

Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

99-102

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.99

Citation:

Cite this paper

Online since:

January 2001

Authors:

Örjan Danielsson, Urban Forsberg, Anne Henry, Erik Janzén

Keywords:

Chemical Vapor Deposition (CVD), Epitaxial Growth, Simulation, Temperature Distribution

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: