Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

91-94

DOI:

10.4028/www.scientific.net/MSF.353-356.91

Citation:

J. Zhang et al., "Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations", Materials Science Forum, Vols. 353-356, pp. 91-94, 2001

Online since:

January 2001

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