Micropipe Filling by the Sublimation Close Space Technique
p.73
p.73
Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method
p.77
p.77
Chemical Vapor Deposition of SiC by the Temperature Oscillation Method
p.81
p.81
Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
p.85
p.85
Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
p.91
p.91
Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
p.95
p.95
Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
p.99
p.99
Modeling Analysis of SiC CVD in a Planetary Reactor
p.103
p.103
Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating-Disc Reactor
p.107
p.107
Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
Abstract:
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Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
91-94
Citation:
Online since:
January 2001
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© 2001 Trans Tech Publications Ltd. All Rights Reserved
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