Paper Titles

Crystal Growth of 15R-SiC and Various Polytype Substrates
p.69

Micropipe Filling by the Sublimation Close Space Technique
p.73

Mechanism for Damage Healing of Cracked 6H-SiC Substrates by the Sublimation Method
p.77

Chemical Vapor Deposition of SiC by the Temperature Oscillation Method
p.81

Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals
p.85

Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations
p.91

Influence of the Growth Conditions on the Layer Parameters of 4H-SiC Epilayers Grown in a Hot-Wall Reactor
p.95

Enlarging the Usable Growth Area in a Hot-Wall Silicon Carbide CVD Reactor by Using Simulation
p.99

Modeling Analysis of SiC CVD in a Planetary Reactor
p.103

HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Aluminium-Silicon as a Melt for the Low...

Aluminium-Silicon as a Melt for the Low Temperature Growth of SiC Crystals

Article Preview

Abstract:

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2000

Info:

Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

85-90

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.85

Citation:

Cite this paper

Online since:

January 2001

Authors:

Didier Chaussende, Christophe Jacquier, Gabriel Ferro, Jean Claude Viala, François Cauwet, Yves Monteil

Keywords:

Aluminum Melt, Liquid Phase Epitaxy (LPE), Low-Temperature, Spontaneous Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: