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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Crystal Growth of 15R-SiC and Various Polytype...

Crystal Growth of 15R-SiC and Various Polytype Substrates

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

69-72

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.69

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Online since:

January 2001

Authors:

Taro Nishiguchi, T. Shimizu, Makato Sasaki, S. Oshima, Shigehiro Nishino

Keywords:

(1120) Plane, 15R-SiC, Annealing, Crystal Growth, Stacking Fault, Sublimation Method, Substrate Type

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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