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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Numerical Simulation of Thermal Stress Formation...

Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

65-68

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.65

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Online since:

January 2001

Authors:

M. Selder, L. Kadinski, F. Durst, Thomas L. Straubinger, Peter J. Wellmann, Dieter Hofmann

Keywords:

Bulk Growth, Global Heat and Mass Transfer, Numerical Modeling, Physical Vapor Transport, Thermoelastic Stress Distribution

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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