Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
p.33
p.33
Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
p.37
p.37
Some Aspects of Sublimation Growth of SiC Ingots
p.41
p.41
Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
p.45
p.45
Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
p.49
p.49
Features of Semi-Insulating SiC Single-Crystal Growth by Physical Vapor Transport
p.53
p.53
Virtual Reactor: A New Tool for SiC Bulk Crystal Growth Study and Optimization
p.57
p.57
Coupled Thermodynamic - Mass Transfer Modeling of the SiC Boule Growth by the PVT Method
p.61
p.61
Numerical Simulation of Thermal Stress Formation During PVT-Growth of SiC Bulk Crystals
p.65
p.65
Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
49-52
Citation:
Online since:
January 2001
Keywords:
Price:
Сopyright:
© 2001 Trans Tech Publications Ltd. All Rights Reserved
Share:
Citation: