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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Some Aspects of Sublimation Growth of SiC Ingots

Some Aspects of Sublimation Growth of SiC Ingots

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

41-44

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.41

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Online since:

January 2001

Authors:

S.F. Avramenko, V.S. Kiselev, M. Valakh, V.A. Yukhimchuk

Keywords:

PVT Growth, Residual Stress, Shape of the Crystals

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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