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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Growth of Highly Aluminum-Doped p-type 6H-SiC...

Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

45-48

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.45

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Online since:

January 2001

Authors:

Norbert Schulze, Jürgen Gajowski, Kurt Semmelroth, Michael Laube, Gerhard Pensl

Keywords:

Acceptor, Aluminum (Al), C-V, Hall Scattering Factor, Hall-Effect, p-Type, SIMS, Sublimation Growth

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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