Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

45-48

Citation:

N. Schulze et al., "Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method", Materials Science Forum, Vols. 353-356, pp. 45-48, 2001

Online since:

January 2001

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$38.00

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