Paper Titles

Defect Reduction in Sublimation Grown Silicon Carbide Crystals by Adjustment of Thermal Boundary Conditions
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Progress in 4H-SiC Bulk Growth
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Stability Criteria for 4H-SiC Bulk Growth
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Growth Related Distribution of Secondary Phase Inclusions in 6H-SiC Single Crystals
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Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow
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Mass Transport and Powder Source Evolution in Sublimation Growth of SiC Bulk Crystals
p.37

Some Aspects of Sublimation Growth of SiC Ingots
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Growth of Highly Aluminum-Doped p-type 6H-SiC Single Crystals by the Modified Lely Method
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Study of Boron Incorporation During PVT Growth of p-type SiC Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 353-356Investigation of a PVT SiC-Growth Set-up Modified...

Investigation of a PVT SiC-Growth Set-up Modified by an Additional Gas Flow

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Silicon Carbide and Related Materials 2000

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Periodical:

Materials Science Forum (Volumes 353-356)

Pages:

33-36

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.353-356.33

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Online since:

January 2001

Authors:

Thomas L. Straubinger, Peter J. Wellmann, Albrecht Winnacker

Keywords:

Doping, Inclusion, Micropipe Closing, Modified-PVT

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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